Composition and strain mapping of interfaces in InAs/GaSb superlattices by aberration-corrected high-resolution transmission electron microscopy
Identifieur interne : 004559 ( Main/Repository ); précédent : 004558; suivant : 004560Composition and strain mapping of interfaces in InAs/GaSb superlattices by aberration-corrected high-resolution transmission electron microscopy
Auteurs : RBID : Pascal:10-0427106Descripteurs français
- Pascal (Inist)
- Déformation mécanique, Aberration optique, Traitement image, Aberration sphérique, Imagerie, Fonction onde, Algorithme, Microscopie électronique transmission, Résolution spatiale, Superréseau, Composé binaire, Indium Arséniure, Analyse multivariable, Détecteur quantique, InAs, As In, 0130C, 0707D, 4215F, 4230V.
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Abstract
The past decade has witnessed rapid progress in the development of techniques for correcting lens aberrations in high-resolution transmission electron microscopy (HRTEM), resulting in significant enhancement in the directly interpretable spatial resolution in HRTEM images. Furthermore, in combination with advanced image processing and analysis, it is now possible to employ HRTEM as a quantitative technique for structural and chemical analysis at the atomic scale. In this paper we have applied these developments to investigate interfaces in InAs/GaSb superlattices, the main objectives being the mapping of changes in chemical composition and strain at each interface. For examining changes in composition we use the focal series reconstruction technique, which retrieves the quantum-mechanical electron wave function at the exit surface of the sample. The phase images of the electron wave function are then analyzed by linear multivariate statistical analysis to independently quantify change in the In/Ga and As/Sb contents across each interface. The strain profiles across interfaces are determined from HRTEM images, obtained from a TEM equipped with a spherical aberration corrector, employing the "peak-pair analysis" (PPA) algorithm. Finally, the high-angle annular dark-field imaging technique (HAADF), using a monochromated and probe corrected TEM, is also employed to examine interfaces.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Composition and strain mapping of interfaces in InAs/GaSb superlattices by aberration-corrected high-resolution transmission electron microscopy</title><author><name sortKey="Mahalingam, K" uniqKey="Mahalingam K">K. Mahalingam</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Universal Technology Corporation</s1><s2>Dayton, OH, 45432-2600</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Universal Technology Corporation</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Air Force Research Laboratory, Wright-Patterson Air Force Base</s1><s2>OH, 45433-7707</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Ohio</region></placeName></affiliation></author><author><name sortKey="Haugan, H J" uniqKey="Haugan H">H. J. Haugan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Universal Technology Corporation</s1><s2>Dayton, OH, 45432-2600</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Universal Technology Corporation</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Air Force Research Laboratory, Wright-Patterson Air Force Base</s1><s2>OH, 45433-7707</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Ohio</region></placeName></affiliation></author><author><name sortKey="Brown, G J" uniqKey="Brown G">G. J. Brown</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Air Force Research Laboratory, Wright-Patterson Air Force Base</s1><s2>OH, 45433-7707</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Ohio</region></placeName></affiliation></author><author><name sortKey="Eyink, K G" uniqKey="Eyink K">K. G. Eyink</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Air Force Research Laboratory, Wright-Patterson Air Force Base</s1><s2>OH, 45433-7707</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Ohio</region></placeName></affiliation></author><author><name sortKey="Szmulowicz, F" uniqKey="Szmulowicz F">F. Szmulowicz</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Air Force Research Laboratory, Wright-Patterson Air Force Base</s1><s2>OH, 45433-7707</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Ohio</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>University of Dayton Research Institute</s1><s2>OH, 45469-0178</s2><s3>USA</s3><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Ohio</region></placeName></affiliation></author><author><name>BIN JIANG</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>NCEM, Lawrence-Berkeley Laboratory</s1><s2>Berkeley, CA, 94720-8250</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Berkeley, CA, 94720-8250</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>FEI Company, 5350 NE Dawson Creek Dr.</s1><s2>Hillsboro, OR, 97124</s2><s3>USA</s3><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Hillsboro, OR, 97124</wicri:noRegion></affiliation></author><author><name sortKey="Kisielowski, C F" uniqKey="Kisielowski C">C. F. Kisielowski</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>NCEM, Lawrence-Berkeley Laboratory</s1><s2>Berkeley, CA, 94720-8250</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Berkeley, CA, 94720-8250</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0427106</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0427106 INIST</idno><idno type="RBID">Pascal:10-0427106</idno><idno type="wicri:Area/Main/Corpus">003D95</idno><idno type="wicri:Area/Main/Repository">004559</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Algorithms</term><term>Binary compounds</term><term>Image processing</term><term>Imagery</term><term>Indium Arsenides</term><term>Multivariate analysis</term><term>Optical aberration</term><term>Quantum detector</term><term>Spatial resolution</term><term>Spherical aberration</term><term>Strains</term><term>Superlattices</term><term>Transmission electron microscopy</term><term>Wave functions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Déformation mécanique</term><term>Aberration optique</term><term>Traitement image</term><term>Aberration sphérique</term><term>Imagerie</term><term>Fonction onde</term><term>Algorithme</term><term>Microscopie électronique transmission</term><term>Résolution spatiale</term><term>Superréseau</term><term>Composé binaire</term><term>Indium Arséniure</term><term>Analyse multivariable</term><term>Détecteur quantique</term><term>InAs</term><term>As In</term><term>0130C</term><term>0707D</term><term>4215F</term><term>4230V</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The past decade has witnessed rapid progress in the development of techniques for correcting lens aberrations in high-resolution transmission electron microscopy (HRTEM), resulting in significant enhancement in the directly interpretable spatial resolution in HRTEM images. Furthermore, in combination with advanced image processing and analysis, it is now possible to employ HRTEM as a quantitative technique for structural and chemical analysis at the atomic scale. In this paper we have applied these developments to investigate interfaces in InAs/GaSb superlattices, the main objectives being the mapping of changes in chemical composition and strain at each interface. For examining changes in composition we use the focal series reconstruction technique, which retrieves the quantum-mechanical electron wave function at the exit surface of the sample. The phase images of the electron wave function are then analyzed by linear multivariate statistical analysis to independently quantify change in the In/Ga and As/Sb contents across each interface. The strain profiles across interfaces are determined from HRTEM images, obtained from a TEM equipped with a spherical aberration corrector, employing the "peak-pair analysis" (PPA) algorithm. Finally, the high-angle annular dark-field imaging technique (HAADF), using a monochromated and probe corrected TEM, is also employed to examine interfaces.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7608</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Composition and strain mapping of interfaces in InAs/GaSb superlattices by aberration-corrected high-resolution transmission electron microscopy</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Quantum sensing and nanophotonic devices VII : 24-28 January 2010, San Francisco, California, United States</s1></fA09><fA11 i1="01" i2="1"><s1>MAHALINGAM (K.)</s1></fA11><fA11 i1="02" i2="1"><s1>HAUGAN (H. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>BROWN (G. J.)</s1></fA11><fA11 i1="04" i2="1"><s1>EYINK (K. G.)</s1></fA11><fA11 i1="05" i2="1"><s1>SZMULOWICZ (F.)</s1></fA11><fA11 i1="06" i2="1"><s1>BIN JIANG</s1></fA11><fA11 i1="07" i2="1"><s1>KISIELOWSKI (C. F.)</s1></fA11><fA12 i1="01" i2="1"><s1>RAZEGHI (M.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SUDHARSANAN (Rengarajan)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>BROWN (Gail J.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Universal Technology Corporation</s1><s2>Dayton, OH, 45432-2600</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Air Force Research Laboratory, Wright-Patterson Air Force Base</s1><s2>OH, 45433-7707</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>University of Dayton Research Institute</s1><s2>OH, 45469-0178</s2><s3>USA</s3><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>NCEM, Lawrence-Berkeley Laboratory</s1><s2>Berkeley, CA, 94720-8250</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="05"><s1>FEI Company, 5350 NE Dawson Creek Dr.</s1><s2>Hillsboro, OR, 97124</s2><s3>USA</s3><sZ>6 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>76081S.1-76081S.9</s2></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham, Wash.</s2></fA25><fA26 i1="01"><s0>978-0-8194-8004-0</s0></fA26><fA26 i1="02"><s0>0-8194-8004-5</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174690820570</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>33 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0427106</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The past decade has witnessed rapid progress in the development of techniques for correcting lens aberrations in high-resolution transmission electron microscopy (HRTEM), resulting in significant enhancement in the directly interpretable spatial resolution in HRTEM images. Furthermore, in combination with advanced image processing and analysis, it is now possible to employ HRTEM as a quantitative technique for structural and chemical analysis at the atomic scale. In this paper we have applied these developments to investigate interfaces in InAs/GaSb superlattices, the main objectives being the mapping of changes in chemical composition and strain at each interface. For examining changes in composition we use the focal series reconstruction technique, which retrieves the quantum-mechanical electron wave function at the exit surface of the sample. The phase images of the electron wave function are then analyzed by linear multivariate statistical analysis to independently quantify change in the In/Ga and As/Sb contents across each interface. The strain profiles across interfaces are determined from HRTEM images, obtained from a TEM equipped with a spherical aberration corrector, employing the "peak-pair analysis" (PPA) algorithm. Finally, the high-angle annular dark-field imaging technique (HAADF), using a monochromated and probe corrected TEM, is also employed to examine interfaces.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00A30C</s0></fC02><fC02 i1="02" i2="3"><s0>001B00G07D</s0></fC02><fC02 i1="03" i2="3"><s0>001B40B15F</s0></fC02><fC02 i1="04" i2="3"><s0>001B40B30V</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Déformation mécanique</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Strains</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Aberration optique</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Optical aberration</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Aberración óptica</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Traitement image</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Image processing</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Aberration sphérique</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Spherical aberration</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Aberración esférica</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Imagerie</s0><s5>19</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Imagery</s0><s5>19</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Imaginería</s0><s5>19</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Fonction onde</s0><s5>23</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Wave functions</s0><s5>23</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Algorithme</s0><s5>24</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Algorithms</s0><s5>24</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>30</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>30</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Résolution spatiale</s0><s5>41</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Spatial resolution</s0><s5>41</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Superréseau</s0><s5>47</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Superlattices</s0><s5>47</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Composé binaire</s0><s5>50</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Binary compounds</s0><s5>50</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Analyse multivariable</s0><s5>61</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Multivariate analysis</s0><s5>61</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Détecteur quantique</s0><s5>62</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Quantum detector</s0><s5>62</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Detector cuántico</s0><s5>62</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>0130C</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>0707D</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>4215F</s0><s4>INC</s4><s5>91</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>4230V</s0><s4>INC</s4><s5>92</s5></fC03><fN21><s1>277</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Quantum sensing and nanophotonic devices</s1><s2>07</s2><s3>San Francisco CA USA</s3><s4>2010</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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